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PGS. TS. Đỗ Văn Nam
Đỗ Văn Nam

Thông tin chung

  • Nơi làm việc: Viện Nghiên cứu tiên tiến Phenikaa
  • Chức vụ: Viện trưởng
  • Địa chỉ nơi làm việc: 167 Hoàng Ngân, Trung Hòa, Cầu Giấy, Hà Nội, Việt Nam.
  • Bộ môn / Nhóm tại PIAS: Vật lý các hệ điện tử thấp chiều
  • Thư điện tử: nam.dovan@phenikaa-uni.edu.vn
  • ĐT di động:
  • Điện thoại: +84-90 415 8559
  • Fax:
  • Website cá nhân

Quá trình đào tạo

  • Cử nhân/ Kỹ sư
    • Thời gian đào tạo: 05/1997-05/2001
    • Cơ sở đào tạo: Hanoi University of Education
    • Chuyên ngành: Theoretical Physics and Mathematical Physics
    • Đồ án/Luận án:
    • Học vị đạt được: BSc
  • Thạc sỹ
    • Thời gian đào tạo: 10/2001-10/2003
    • Cơ sở đào tạo: Hanoi University of Education
    • Chuyên ngành: Theoretical Physics and Mathematical Physics
    • Đồ án/Luận án:
    • Học vị đạt được: MSc
  • Tiến sỹ
    • Thời gian đào tạo: 10/2004-12/2007
    • Cơ sở đào tạo: Paris-Sud University, France.
    • Chuyên ngành: Electronic physics
    • Đồ án/Luận án:
    • Học vị đạt được: PhD

Hoạt động nghiên cứu

  • Hướng nghiên cứu chính: Electronic, transport and optical properties of 2D materials and van der Waals heterostructures; Design and characterising of nanoscaled electronic devices using quantum simulation approach.
  • Hướng nghiên cứu cần tìm sinh viên:
    We are looking for students at the master level to do the topics:
    1. Using the transfer matrix method to determine the Kerr and Faraday rotation angles in layered nanostructures.
    2. Using the projection operator method to establish the relationship between Zitterbewegung motion and the charge conductivity, Berry curvature and the Chern number of multiband systems
    3. Using the kernel polynomial method to study the electronic and optical properties of twisted bilayer graphene systems
  • Các đề tài nghiên cứu:
    4 Theoretical and experimental studies of material and electronic/optoelectronic devices based on nanoporous carbon doping semiconducting ZnO thin films and on pure single layer carbon atomic or grapheme sheets Nafosted 2010-2013 PI
    3 Study of the role and impact of metallic contacts on transport properties of graphene Nafosted 2013-2015 PI
    2 Study of electronic structure, transport and optical properties of graphene in some typical van der Waals heterostructures using the empirical approach Nafosted 2017-2019 PI
    1 Development of OPEDEVS, an open source code, for the simulations of quantum transport of electrons in nanometer devices Ministry of Education and Training 2012-2014 PI
  • Các công bố khoa học:
    5 Bài báo ISI
    5.16 A study of quantum transport in end-of-roadmap DG-MOSFETs using a fully self-consistent Wigner Monte Carlo approach Damien Querlioz, Jrme Saint-Martin, Van-Nam Do, Arnaud Bournel, and Philippe Dollfus IEEE Transactions on Nanotechnology, 5, 6, pp737-744 Print ISSN: 1536-125X; Electronic ISSN: 1941-0085. 2006
    5.15 Transport and noise in resonant tunneling diode using self-consistent Green’s function calculation V. Nam Do and P. Dollfus Journal of Applied Physics 100, 093705 Print ISSN: 0021-8979; Electronic ISSN: 1089-7550 2006
    5.14 Oscillation of gate leakage current in double-gate metal-oxide-semiconductor field-effect transistors V. Nam Do and P. Dollfus Journal of Applied Physics 101, 073709 Print ISSN: 0021-8979; Electronic ISSN: 1089-7550 2007
    5.13 Scattering approach to current and noise in interacting mesoscopic systems V. Nam Do, P. Dollfus, and V. Lien Nguyen Physical Review B 76, 125309 Print ISSN: 2469-9950; Electronic ISSN: 2469-9969 2007
    5.12 Shot noise in resonant tunneling structures using non-equilibrium Green’s function calculation V. Nam Do, P. Dollfus and V. Lien Nguyen Journal of Computational Electronics, 6 pp.125-128 Print ISSN: 1569-8025; Electronic ISSN: 1572-8137 2007
    5.11 Phonon-induced shot noise in double barrier resonant tunneling structures V. Nam Do and P. Dollfus Applied Physics Letters 91, 022104 Print ISSN: 0003-6951; Electronic ISSN: 1077-3118 2007
    5.10 Wigner ensemble Monte-Carlo simulation of nano-MOSFETs in degenerate conditions D. Querlioz, J. Saint‐Martin, V.‐N. Do, A. Bournel, and P. Dollfus Physica Status Solidi C, 5(1), pp.150 - 15 ISSN: 1610-1642 (online) 2008
    5.9 Electronic transport and spin-polarization effects of relativistic-like particles in mesoscopic graphene structures V. Nam Do, V. Hung Nguyen, P. Dollfus, and A. Bournel Journal of Applied Physics 104, 063708 Print ISSN: 0021-8979; Electronic ISSN: 1089-7550 2008
    5.8 Comment on “Nagative differential conductance of electrons in graphene barrier” [Appl. Phys. Lett. 90, 143111 (2007)] V. Nam Do Applied Physics Letters 92, 216101 Print ISSN: 0003-6951; Electronic ISSN: 1077-3118 2008
    5.7 Controllable spin-dependent transport in armchair graphene nanoribbon structure V. Hung Nguyen, V. Nam Do, A. Bournel, V. Lien Nguyen, and P. Dollfus Journal of Applied Physics 106, 053710 Print ISSN: 0021-8979; Electronic ISSN: 1089-7550 2009
    5.6 Spin-dependent transport in armchair graphene nanoribbons structures with edge roughness effects V. Hung Nguyen, V. Nam Do, A. Bournel, V. Lien Nguyen and P. Dollfus Journal of Physics: Conference Series, 193, 012100 Print ISSN: 1742-6588; Electronic ISSN: 1742-6596 2009
    5.5 Effects of charged impurities and lattice defects on transport properties of nanoscale graphene structures V. Nam Do and P. Dollfus Journal of Applied Physics 106, 023719 Print ISSN: 0021-8979; Electronic ISSN: 1089-7550 2009
    5.4 One-dimensional protuberant optically active ZnO structure fabricated by oxidizing ZnS nanowires V. NamDo, N.T.Tuan, D.Q.Trung, N.D.T.Kien, N.D.Chien, and P.T.Huy Materials Letters, 64, 14, pp.1650-1652 ISSN: 0167-577X 2010
    5.3 Graphene and its one-dimensional patterns: from basic properties towards applications Van Nam Do and Thanh Huy Pham Advances in Natural Sciences: Nanoscience and Nanotechnology, 1, 3 ISSN: 2043-6262 (Online) 2010
    5.2 Modelling of metal-graphene coupling and its influence on transport properties in graphene at the charge neutrality point V. Nam Do and P. Dollfus Journal of Physics: Condensed Matter, 22, 42 Print ISSN: 0953-8984; Electronic ISSN: 1361-648X 2010
    5.1 Negative differential resistance in zigzag-edge graphene nanoribbon junctions V. Nam Do and P. Dollfus Journal of Applied Physics 107, 063705 Print ISSN: 0021-8979; Electronic ISSN: 1089-7550 2010
    4 Bài báo quốc tế khác
    3 Báo cáo tại hội nghị quốc gia/quốc tế
    3.3 Fully quantum self-consistent study of ultimate DG-MOSFETs including realistic scattering using a Wigner Monte-Carlo approach D. Querlioz, J. Saint-Martin, V.-N. Do, A. Bournel, and P. Dollfus IEDM Technical Digest, 346939 Print ISSN: 0163-1918; Electronic ISSN: 2156-017X 2006
    3.2 An improved Wigner Monte-Carlo technique for the self-consistent simulation of RTSs D. Querlioz, P. Dollfus, V. Nam Do, and V. Lien Nguyen 11th International Workshop on Computational Electronics, TU Wien, 25-27 May 2006 3-901578-16-1 2006
    3.1 Phonon-induced shot noise enhancement in double barrier resonant tunneling diodes V. Nam Do, P. Dollfus and V. Lien Nguyen AIP conference proceedings ISBN 978-0-7354-0432-8; ISSN 0094-243X 2007
    2 Bài báo trên các tạp chí khoa học quốc gia
    1 Khác (Sách chuyên khảo, bằng sáng chế, giải thưởng khoa học, ...)
  • Các công bố đã gửi đăng:

Công tác đào tạo

  • Các môn học tham gia giảng dạy:
    Quantum Mechanics, Statistical Mechanics, Solid-State Physics, Linear Algebra, Device physics
  • Các sinh viên đã hướng dẫn thành công:
    6 LE Hoang Anh PhD (2010-2014) Study of electronic, optical and transport properties of graphene towards applications of electronic and optoelectronics devices Hanoi University of Science and Technology
    5 HO Si Ta PhD (2011-2015) Plasmon characteristics and dynamical properties of electrons in graphene Hanoi University of Science and Technology
    4 PHAM Tien Phat MSc (2014-2015) Electron transport characteristics of T- and L-shaped graphene systems University of Natural Science, Ho Chi Minh City
    3 NGUYEN Thi Huyen MSc (2015-2016) Empirical approach to calculate the electronic structure of several typical semiconductors Hanoi University of Education
    2 NGUYEN Trung Kien BSc (2012-2013) Hanoi University of Science and Technology
    1 NGUYEN Van Duy BSc (2012-2013) Hanoi University of Education
  • Các sinh viên đang hướng dẫn: