Đỗ Văn Nam, Assoc.Prof. PhD.
Basic infomations
 Affiliation: Phenikaa Institute for Advanced Study (PIAS)
 Position: Director
 Work address: 167 Hoang Ngan, Trung Hoa, Cau Giay, Ha Noi, Viet Nam.
 Department/Group at TIAS: Physics of lowdimensional electronic systems
 Email: nam.dovan@phenikaauni.edu.vn
 Cell phone:
 Tel: +8490 415 8559
 Fax:
 My Website
Qualifications

Bachelor/Engineer
 Years: 05/199705/2001
 Academic institutions: Hanoi University of Education
 Major/ Specialty: Theoretical Physics and Mathematical Physics
 Project/Thesis:
 Academic degree: BSc

Master
 Years: 10/200110/2003
 Academic institutions: Hanoi University of Education
 Major/ Specialty: Theoretical Physics and Mathematical Physics
 Project/Thesis:
 Academic degree: MSc

PhD
 Years: 10/200412/2007
 Academic institutions: ParisSud University, France.
 Major/ Specialty: Electronic physics
 Project/Thesis:
 Academic degree: PhD
Research works
 Main research orientation: Electronic, transport and optical properties of 2D materials and van der Waals heterostructures; Design and characterising of nanoscaled electronic devices using quantum simulation approach.

Orientation for research students:
We are looking for students at the master level to do the topics:
1. Using the transfer matrix method to determine the Kerr and Faraday rotation angles in layered nanostructures.
2. Using the projection operator method to establish the relationship between Zitterbewegung motion and the charge conductivity, Berry curvature and the Chern number of multiband systems
3. Using the kernel polynomial method to study the electronic and optical properties of twisted bilayer graphene systems 
List all the research grants/projects received:
4 Theoretical and experimental studies of material and electronic/optoelectronic devices based on nanoporous carbon doping semiconducting ZnO thin films and on pure single layer carbon atomic or grapheme sheets Nafosted 20102013 PI 3 Study of the role and impact of metallic contacts on transport properties of graphene Nafosted 20132015 PI 2 Study of electronic structure, transport and optical properties of graphene in some typical van der Waals heterostructures using the empirical approach Nafosted 20172019 PI 1 Development of OPEDEVS, an open source code, for the simulations of quantum transport of electrons in nanometer devices Ministry of Education and Training 20122014 PI 
Publications:
5 Article(s) in ISIcovered journals 5.16 A study of quantum transport in endofroadmap DGMOSFETs using a fully selfconsistent Wigner Monte Carlo approach Damien Querlioz, Jrme SaintMartin, VanNam Do, Arnaud Bournel, and Philippe Dollfus IEEE Transactions on Nanotechnology, 5, 6, pp737744 Print ISSN: 1536125X; Electronic ISSN: 19410085. 2006 5.15 Transport and noise in resonant tunneling diode using selfconsistent Green’s function calculation V. Nam Do and P. Dollfus Journal of Applied Physics 100, 093705 Print ISSN: 00218979; Electronic ISSN: 10897550 2006 5.14 Oscillation of gate leakage current in doublegate metaloxidesemiconductor fieldeffect transistors V. Nam Do and P. Dollfus Journal of Applied Physics 101, 073709 Print ISSN: 00218979; Electronic ISSN: 10897550 2007 5.13 Scattering approach to current and noise in interacting mesoscopic systems V. Nam Do, P. Dollfus, and V. Lien Nguyen Physical Review B 76, 125309 Print ISSN: 24699950; Electronic ISSN: 24699969 2007 5.12 Shot noise in resonant tunneling structures using nonequilibrium Green’s function calculation V. Nam Do, P. Dollfus and V. Lien Nguyen Journal of Computational Electronics, 6 pp.125128 Print ISSN: 15698025; Electronic ISSN: 15728137 2007 5.11 Phononinduced shot noise in double barrier resonant tunneling structures V. Nam Do and P. Dollfus Applied Physics Letters 91, 022104 Print ISSN: 00036951; Electronic ISSN: 10773118 2007 5.10 Wigner ensemble MonteCarlo simulation of nanoMOSFETs in degenerate conditions D. Querlioz, J. Saint‐Martin, V.‐N. Do, A. Bournel, and P. Dollfus Physica Status Solidi C, 5(1), pp.150  15 ISSN: 16101642 (online) 2008 5.9 Electronic transport and spinpolarization effects of relativisticlike particles in mesoscopic graphene structures V. Nam Do, V. Hung Nguyen, P. Dollfus, and A. Bournel Journal of Applied Physics 104, 063708 Print ISSN: 00218979; Electronic ISSN: 10897550 2008 5.8 Comment on “Nagative differential conductance of electrons in graphene barrier” [Appl. Phys. Lett. 90, 143111 (2007)] V. Nam Do Applied Physics Letters 92, 216101 Print ISSN: 00036951; Electronic ISSN: 10773118 2008 5.7 Controllable spindependent transport in armchair graphene nanoribbon structure V. Hung Nguyen, V. Nam Do, A. Bournel, V. Lien Nguyen, and P. Dollfus Journal of Applied Physics 106, 053710 Print ISSN: 00218979; Electronic ISSN: 10897550 2009 5.6 Spindependent transport in armchair graphene nanoribbons structures with edge roughness effects V. Hung Nguyen, V. Nam Do, A. Bournel, V. Lien Nguyen and P. Dollfus Journal of Physics: Conference Series, 193, 012100 Print ISSN: 17426588; Electronic ISSN: 17426596 2009 5.5 Effects of charged impurities and lattice defects on transport properties of nanoscale graphene structures V. Nam Do and P. Dollfus Journal of Applied Physics 106, 023719 Print ISSN: 00218979; Electronic ISSN: 10897550 2009 5.4 Onedimensional protuberant optically active ZnO structure fabricated by oxidizing ZnS nanowires V. NamDo, N.T.Tuan, D.Q.Trung, N.D.T.Kien, N.D.Chien, and P.T.Huy Materials Letters, 64, 14, pp.16501652 ISSN: 0167577X 2010 5.3 Graphene and its onedimensional patterns: from basic properties towards applications Van Nam Do and Thanh Huy Pham Advances in Natural Sciences: Nanoscience and Nanotechnology, 1, 3 ISSN: 20436262 (Online) 2010 5.2 Modelling of metalgraphene coupling and its influence on transport properties in graphene at the charge neutrality point V. Nam Do and P. Dollfus Journal of Physics: Condensed Matter, 22, 42 Print ISSN: 09538984; Electronic ISSN: 1361648X 2010 5.1 Negative differential resistance in zigzagedge graphene nanoribbon junctions V. Nam Do and P. Dollfus Journal of Applied Physics 107, 063705 Print ISSN: 00218979; Electronic ISSN: 10897550 2010 4 Article(s) in other international journals 3 National/International Conference(s) 3.3 Fully quantum selfconsistent study of ultimate DGMOSFETs including realistic scattering using a Wigner MonteCarlo approach D. Querlioz, J. SaintMartin, V.N. Do, A. Bournel, and P. Dollfus IEDM Technical Digest, 346939 Print ISSN: 01631918; Electronic ISSN: 2156017X 2006 3.2 An improved Wigner MonteCarlo technique for the selfconsistent simulation of RTSs D. Querlioz, P. Dollfus, V. Nam Do, and V. Lien Nguyen 11th International Workshop on Computational Electronics, TU Wien, 2527 May 2006 3901578161 2006 3.1 Phononinduced shot noise enhancement in double barrier resonant tunneling diodes V. Nam Do, P. Dollfus and V. Lien Nguyen AIP conference proceedings ISBN 9780735404328; ISSN 0094243X 2007 2 Article(s) in national scientific journals 1 Others (monographs, patents, scientific awards, ...) 
Submitted:
Training works

Teaching subjects:
Quantum Mechanics, Statistical Mechanics, SolidState Physics, Linear Algebra, Device physics 
Former students:
6 LE Hoang Anh PhD (20102014) Study of electronic, optical and transport properties of graphene towards applications of electronic and optoelectronics devices Hanoi University of Science and Technology 5 HO Si Ta PhD (20112015) Plasmon characteristics and dynamical properties of electrons in graphene Hanoi University of Science and Technology 4 PHAM Tien Phat MSc (20142015) Electron transport characteristics of T and Lshaped graphene systems University of Natural Science, Ho Chi Minh City 3 NGUYEN Thi Huyen MSc (20152016) Empirical approach to calculate the electronic structure of several typical semiconductors Hanoi University of Education 2 NGUYEN Trung Kien BSc (20122013) Hanoi University of Science and Technology 1 NGUYEN Van Duy BSc (20122013) Hanoi University of Education 
Current students: